Impact of Si nanocrystals in a-SiOx<Er> in C-Band emission for applications in resonators structures

Date
Authors
Figueira, D. S. L
Mustafa, D.
Tessler, L. R.
Frateschi, N. C.
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
Description
Si nanocrystals (Si-NC) in a-SiOx<Er> were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be due to less efficient energy transfer processes from the nanocrystals than from the amorphous matrix to the Er3+ ions, perhaps due to the formation of more centro-symmetric Er3+ sites at the nanocrystal surfaces or to very different optimal erbium concentrations between amorphous and crystallized samples.
Comment: 3 pages, 4 figures
Keywords
Physics - Optics
Citation
Collections