Studies of single doping of Mn and Fe in Si to deduce simple guidelines in selecting transition metal elements for growing Si-based spintronic materials

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Authors
Shaughnessy, Michael
Fong, C. Y.
Snow, Ryan
Yang, L. H.
Chen, X. S.
Zhiang, Z. M.
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Abstract
Description
Single dopings of Mn and Fe in Si are investigated using 8-, 64-, and 216-atom supercells and a first-principles method based on density functional theory. Between the two transition metal elements (TMEs), atom sizes play an essential role in determining the contraction or the expansion of neighboring atoms around the TME dopant at a substitutional site. At a tetrahedral interstitial site, there is only expansion. Magnetic moments/TME at the two sites are calculated. Physical origins for these inter-related properties are discussed. A few suggestions about the growth of these Si-based alloys are given.
Comment: 5 figures
Keywords
Condensed Matter - Materials Science, Condensed Matter - Other Condensed Matter
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