Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

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Shen, T.
Gu, J. J.
Xu, M.
Wu, Y. Q.
Bolen, M. L.
Capano, M. A.
Engel, L. W.
Ye, P. D.
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Abstract
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Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Hass oscillations in diagonal magneto-resistance of gated epitaxial graphene on SiC (0001).
Comment: 2 new references added
Keywords
Condensed Matter - Mesoscale and Nanoscale Physics
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