Photo-Processing of Silicon Nitride

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Date
1995
Authors
Rathi, V K
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Abstract
Silicon nitride films were synthesized using the new process of photo-chemical vapour deposition (photo-CVD). Films of different compositions were prepared by mercury-sensitized photo-CVD using 2% silane and ammonia as reactant gases. Material properties of interest to device technology have been evaluated. Dependence of the properties of the films on the Si/N ratio and the amount of hydrogen present in the films is studied, and optimum growth conditions of deposition are identified. Studies of metal-insulators-semiconductor structures with the optimized photo nitride as an active dielectric showed fixed charge ~ 1.2 X 10” cm-*, mobile charge 3 X 10” cm-’ and midgap interface state density ~ 1.7 X 10” eV- ’ cm- ’ . indicating their potential for use in metal-organic-semiconductor technology. A limited comparison of data with direct photo-CVD is also given.
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Keywords
Photo-processing, Silicon nitrides, Chemical vapour deposition
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