Tuning the exciton g-factor in single InAs/InP quantum dots

Date
Authors
Kim, D.
Sheng, W.
Poole, P. J.
Dalacu, D.
Lefebvre, J.
Lapointe, J.
Reimer, M. E.
Aers, G. C.
Williams, R. L.
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
Description
Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g-factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp3 tight binding calculations, which show that the hole g-factor is sensitive to confinement effects through orbital angular momentum mixing between the light-hole and heavy-hole valence bands. We demonstrate tunability of the exciton g-factor by manipulating the quantum dot dimensions using pyramidal InP nanotemplates.
Keywords
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Citation
Collections