Role of incorporated hydrogen in non-stoichiometric photo-deposited silicon nitride films

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Date
2002
Authors
Sahu, B S
Srivastava, P
Sehgal, H K
Agnihotri, O P
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Abstract
Silicon nitride films were deposited by mercury-sensitized photochemical vapor deposition utilizing a gaseous mixture of Si2H6 (2% in Ar) and NH3 under 253.7 nm ultraviolet light irradiation. Non-stoichiometric silicon-rich and nitrogen-rich samples were deposited by varying gas flow ratio. High partial pressure of disilane results in the formation of clusters, with the incorporation of hydrogen in the form of Si---H and N---H stretching modes below the detection level of Fourier transform infrared spectroscopy. In the nitrogen-rich sample the bonded hydrogen concentration is 0.56×1018 cm−2. After annealing the samples at 350 °C for 3 h in a pressure of 50 mTorr, the interface electronic state density decreases for silicon-rich sample and increases for nitrogen-rich sample.
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Keywords
Silicon nitride, Hydrogen, Fourier transform infrared spectroscopy (FTIR), Deposition process
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