Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects

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Authors
Wimmer, M.
Lobenhofer, M.
Moser, J.
Matos-Abiague, A.
Schuh, D.
Wegscheider, W.
Fabian, J.
Richter, K.
Weiss, D.
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Abstract
Description
We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctions demonstrating that the tunneling anisotropic magnetoresistance (TAMR) effect can be controlled by a magnetic field. Theoretical modelling shows that the interplay of the orbital effects of a magnetic field and the Dresselhaus spin-orbit coupling in the GaAs barrier leads to an independent contribution to the TAMR effect with uniaxial symmetry, whereas the Bychkov-Rashba spin-orbit coupling does not play a role. The effect is intrinsic to barriers with bulk inversion asymmetry.
Comment: 5 pages, 3 figures
Keywords
Condensed Matter - Mesoscale and Nanoscale Physics
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