Gate control of low-temperature spin dynamics in two-dimensional hole systems

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Authors
Kugler, M.
Andlauer, T.
Korn, T.
Wagner, A.
Fehringer, S.
Schulz, R.
Kubová, M.
Gerl, C.
Schuh, D.
Wegscheider, W.
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Abstract
Description
We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as well as time-resolved photoluminescence spectroscopy are utilized in our study. We observe long-lived hole spin dynamics that are strongly temperature dependent, indicating that in-plane localization is crucial for hole spin coherence. By applying a gate voltage, we are able to tune the observed hole g factor by more than 50 percent. Calculations of the hole g tensor as a function of the applied bias show excellent agreement with our experimental findings.
Comment: 8 pages, 7 figures
Keywords
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
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