Gate control of low-temperature spin dynamics in two-dimensional hole systems

Kugler, M.
Andlauer, T.
Korn, T.
Wagner, A.
Fehringer, S.
Schulz, R.
Kubová, M.
Gerl, C.
Schuh, D.
Wegscheider, W.
Journal Title
Journal ISSN
Volume Title
We have investigated spin and carrier dynamics of resident holes in high-mobility two-dimensional hole systems in GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum wells at temperatures down to 400 mK. Time-resolved Faraday and Kerr rotation, as well as time-resolved photoluminescence spectroscopy are utilized in our study. We observe long-lived hole spin dynamics that are strongly temperature dependent, indicating that in-plane localization is crucial for hole spin coherence. By applying a gate voltage, we are able to tune the observed hole g factor by more than 50 percent. Calculations of the hole g tensor as a function of the applied bias show excellent agreement with our experimental findings.
Comment: 8 pages, 7 figures
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science